Gan transistors for efficient power conversion download

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Name of resource. Problem URL. Describe the connection issue. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications.

Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC-DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking.

This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Publication Date: September 15, Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors - see companion website for further details.

Li, W. Del Alamo, J. Nanometre-scale electronics with III—V compound semiconductors. Nature , — Tang, Z. Hsieh, T. He, L. Electron Devices 64 , — Huang, S. Wang, H. Wei, J. Low on-resistance normally-off GaN double-channel metal—oxide—semiconductor. Zhu, M. Zhong, Y.

Arulkumaran, S. Improved power device figure-of-merit 4. Express 4 , Krishna, S. Physica Status Solidi C 10 , — Lo, C. ECS Transactions 66 , — Zhou, Q. Electron Devices 62 , — Sun, M. Express 5 , Herbecq, N. Compound Semicond. GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV. Dogmus, E. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to V using local substrate removal and AlN ultra-wide bandgap.

Express 11 , Ikeda, N. In Int. Power Semicond. Hwang, I. Selvaraj, S. Egawa, T. In Tech. Ishida, M. GaN on Si technologies for power switching devices.

Electron Devices 60 , — Zhang, Z. Electron Devices 63 , — Freedsman, J. Devices 60 , — Christy, D. Express 6 , Liu, X. Download references. We thank R. Soleimanzadeh and G. Nela, J. Ma, C. Erine, T. You can also search for this author in PubMed Google Scholar. Correspondence to E. Peer review information Nature Electronics thanks Kevin Chen and the other, anonymous, reviewer s for their contribution to the peer review of this work.

The mobility peak depends on the nanowire width and shifts to higher V G as w NW decreases.